دیتاشیت HUF75645P3
مشخصات دیتاشیت
| نام دیتاشیت | HUF75645P3, HUF75645S3S |
|---|---|
| حجم فایل | 400.742 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 10 |
دانلود دیتاشیت HUF75645P3, HUF75645S3S |
HUF75645P3, HUF75645S3S Datasheet |
|---|
مشخصات
- RoHS: true
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: onsemi HUF75645P3
- Operating Temperature: -55°C~+175°C@(Tj)
- Power Dissipation (Pd): 310W
- Total Gate Charge (Qg@Vgs): 238nC@20V
- Drain Source Voltage (Vdss): 100V
- Input Capacitance (Ciss@Vds): 3790pF@25V
- Continuous Drain Current (Id): 75A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Reverse Transfer Capacitance (Crss@Vds): -
- Drain Source On Resistance (RDS(on)@Vgs,Id): 14mΩ@75A,10V
- Package: TO-220AB-3
- Manufacturer: onsemi
- Series: UltraFET™
- Packaging: Tube
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 14mOhm @ 75A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 238nC @ 20V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3790pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 310W (Tc)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
- Base Part Number: HUF75
- detail: N-Channel 100V 75A (Tc) 310W (Tc) Through Hole TO-220-3
